TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
V
(BR)CEO
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
I
C
= -30 mA
(see Note 5)
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
EB
=
V
CE
=
V
CE
=
-5 V
-4 V
-4 V
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= -5 A
I
C
= -10 A
I
C
= -5 A
I
C
= -10 A
I
C
= -10 A
I
B
= 0
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
1000
500
-2
-3
-3
-3.5
V
V
V
TEST CONDITIONS
TIP145
I
B
= 0
TIP146
TIP147
TIP145
TIP146
TIP147
TIP145
TIP146
TIP147
MIN
-60
-80
-100
-2
-2
-2
-1
-1
-1
-2
mA
mA
mA
V
TYP
MAX
UNIT
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
V
EC
I
B
= -10 mA
I
B
= -40 mA
V
CE
=
I
E
=
-4 V
-10 A
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -10 A
V
BE(off)
= 4.2 V
I
B(on)
= -40 mA
R
L
= 3
Ω
†
MIN
I
B(off)
= 40 mA
t
p
= 20 µs, dc
≤
2%
TYP
0.9
11
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
POINN [ POWER INNOVATIONS LTD ]
