TIP125, TIP126, TIP127
PNP SILICON POWER DARLINGTONS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
V
(BR)CEO
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
I
C
= -30 mA
(see Note 5)
V
CE
= -30 V
V
CE
= -40 V
V
CE
= -50 V
V
CB
= -60 V
V
CB
= -80 V
V
CB
= -100 V
V
EB
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
I
E
=
-5 V
-3 V
-3 V
-12 mA
-20 mA
-3 V
-5 A
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= -0.5 A
I
C
=
I
C
=
I
C
=
I
C
=
I
B
= 0
-3 A
-3 A
-5 A
-3 A
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
1000
1000
-2
-4
-2.5
-3.5
V
V
V
TEST CONDITIONS
TIP125
I
B
= 0
TIP126
TIP127
TIP125
TIP126
TIP127
TIP125
TIP126
TIP127
MIN
-60
-80
-100
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-2
mA
mA
mA
V
TYP
MAX
UNIT
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
V
EC
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.92
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= -3 A
V
BE(off)
= 5 V
I
B(on)
= -12 mA
R
L
= 10
Ω
†
MIN
I
B(off)
= 12 mA
t
p
= 20 µs, dc
≤
2%
TYP
1.5
8.5
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
POINN [ POWER INNOVATIONS LTD ]
