TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
MARCH 1988 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
IDRM
VD = rated VDRM
RGK = 1 kW
20
mA
IRRM
IGT
VGT
IH
VR = rated VRRM
VAA = 6 V
IG = 0
200
200
1
mA
mA
V
RL = 100 W
RL = 100 W
RGK = 1 kW
RGK = 1 kW
tp(g) ³ 20 ms
60
Gate trigger voltage
VAA = 6 V
tp(g) ³ 20 µs
0.4
Holding current
Peak on-state
voltage
VAA = 6 V
Initiating IT = 10 mA
5
mA
V
VTM
ITM = 1 A
(see Note 5)
1.5
NOTE 5: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle £ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
P R O D U C T
I N F O R M A T I O N
2
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