TIC226D 参数 Datasheet PDF下载

TIC226 SERIES

SILICON TRIACS

APRIL 1971 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

MAX RMS ON-STATE CURRENT

vs

CASE TEMPERATURE

10

I

T(RMS)

- Maximum On-State Current - A

9

8

7

6

5

4

3

2

1

0

0

25

50

75

100

125

150

T

C

- Case Temperature - °C

TI01AB

MAX AVERAGE POWER DISSIPATED

vs

RMS ON-STATE CURRENT

P

(av)

- Maximum Average Power Dissipated - W

32

28

24

20

16

12

8

4

0

0

2

4

6

8

10

12

14

16

I

T(RMS)

- RMS On-State Current - A

T

J

= 110 °C

Conduction Angle = 360 °

Above 8 A rms

See I

TSM

Figure

TI01AC

Figure 7.

Figure 8.

PARAMETER MEASUREMENT INFORMATION

V

AC

V

AC

L1

I

TRM

I

MT2

C1

50 Hz

I

MT2

V

MT2

DUT

R

G

R1

I

G

See

Note A

V

MT2

10%

dv/dt

63%

V

DRM

I

G

NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed

so that the off-state-voltage duration is approximately 800 µs.

Figure 9.

PMC2AA

PRODUCT

INFORMATION

4