TIC225 SERIES
SILICON TRIACS
JULY 1975 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
HOLDING CURRENT
vs
CASE TEMPERATURE
100
V
supply
V
GF
- Gate Forward Voltage - V
I
H
- Holding Current - mA
+
-
10
TC07AD
GATE FORWARD VOLTAGE
vs
GATE FORWARD CURRENT
10
TC07AC
1
1
V
AA
= ± 12 V
I
G
= 0
Initiating I
TM
= 100 mA
0·1
-60
-40
-20
0
20
40
60
80
100
120
0·1
I
A
= 0
T
C
= 25 °C
QUADRANT 1
0·01
0·0001
0·001
0·01
0·1
1
T
C
- Case Temperature - °C
I
GF
- Gate Forward Current - A
Figure 3.
LATCHING CURRENT
vs
CASE TEMPERATURE
100
V
supply
I
GTM
I
L
- Latching Current - mA
+
+
-
-
+
-
-
+
V
AA
= ± 12 V
TC07AE
Figure 4.
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
100
I
TSM
- Peak Full-Sine-Wave Current - A
TI07AA
T
C
≤
70°C
10
10
No Prior Device Conduction
Gate Control Guaranteed
1
-60
-40
-20
0
20
40
60
80
100
120
1
1
10
100
1k
Consecutive 50-Hz Half-Sine-Wave Cycles
T
C
- Case Temperature - °C
Figure 5.
Figure 6.
PRODUCT
INFORMATION
3