TIC216 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
V
TM
I
H
I
L
dv/dt
dv/dt
(c)
Peak on-state voltage
Holding current
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
I
TM
= ±8.4 A
V
supply
= +12 V†
V
supply
= -12 V†
V
supply
= +12 V†
V
supply
= -12 V†
V
DRM
= Rated V
DRM
V
DRM
= Rated V
DRM
TEST CONDITIONS
I
G
= 50 mA
I
G
= 0
I
G
= 0
(see Note 7)
I
G
= 0
I
TRM
= ±8.4 A
T
C
= 110°C
T
C
= 70°C
±5
(see Note 6)
Init’ I
TM
= 100 mA
Init’ I
TM
= -100 mA
50
-20
±50
MIN
TYP
MAX
±1.7
30
-30
UNIT
V
mA
mA
V/µs
V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t
p
=
≤
1 ms, duty cycle
≤
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R
G
= 100
Ω,
t
p(g)
= 20
µs,
t
r
=
≤
15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.5
62.5
UNIT
°C/W
°C/W
PRODUCT
INFORMATION
2
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