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TIC126S 参数 Datasheet PDF下载

TIC126S图片预览
型号: TIC126S
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器器 [SILICON CONTROLLED RECTIFIERS]
分类和应用: 可控硅整流器
文件页数/大小: 6 页 / 113 K
品牌: POINN [ POWER INNOVATIONS LTD ]
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TIC126 SERIES  
SILICON CONTROLLED RECTIFIERS  
APRIL 1971 - REVISED JUNE 2000  
electrical characteristics at 25°C case temperature (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Repetitive peak  
off-state current  
Repetitive peak  
reverse current  
Gate trigger current  
IDRM  
VD = rated VDRM  
TC = 110°C  
TC = 110°C  
2
mA  
IRRM  
IGT  
VR = rated VRRM  
VAA = 12 V  
IG = 0  
2
mA  
mA  
RL = 100 W  
RL = 100 W  
tp(g) ³ 20 ms  
8
20  
2.5  
VAA = 12 V  
TC = - 40°C  
tp(g) ³ 20 µs  
VAA = 12 V  
tp(g) ³ 20 µs  
VAA = 12 V  
tp(g) ³ 20 µs  
RL = 100 W  
RL = 100 W  
VGT  
Gate trigger voltage  
0.8  
1.5  
V
TC = 110°C  
0.2  
V
AA = 12 V  
TC = - 40°C  
100  
Initiating IT = 100 mA  
VAA = 12 V  
IH  
Holding current  
mA  
40  
Initiating IT = 100 mA  
IT = 12 A  
VT  
On-state voltage  
Critical rate of rise of  
off-state voltage  
(see Note 5)  
IG = 0  
1.4  
V
dv/dt  
VD = rated VD  
TC = 110°C  
400  
V/µs  
NOTE 5: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2 %. Voltage sensing-contacts, separate from  
the current carrying contacts, are located within 3.2 mm from the device body.  
thermal characteristics  
PARAMETER  
Junction to case thermal resistance  
Junction to free air thermal resistance  
MIN  
TYP  
MAX  
UNIT  
RqJC  
RqJA  
2.4  
°C/W  
°C/W  
62.5  
P R O D U C T  
I N F O R M A T I O N  
2