TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
IDRM
VD = rated VDRM
TC = 110°C
TC = 110°C
2
mA
IRRM
IGT
VR = rated VRRM
VAA = 12 V
IG = 0
2
mA
mA
RL = 100 W
RL = 100 W
tp(g) ³ 20 ms
8
20
2.5
VAA = 12 V
TC = - 40°C
tp(g) ³ 20 µs
VAA = 12 V
tp(g) ³ 20 µs
VAA = 12 V
tp(g) ³ 20 µs
RL = 100 W
RL = 100 W
VGT
Gate trigger voltage
0.8
1.5
V
TC = 110°C
0.2
V
AA = 12 V
TC = - 40°C
100
Initiating IT = 100 mA
VAA = 12 V
IH
Holding current
mA
40
Initiating IT = 100 mA
IT = 12 A
VT
On-state voltage
Critical rate of rise of
off-state voltage
(see Note 5)
IG = 0
1.4
V
dv/dt
VD = rated VD
TC = 110°C
400
V/µs
NOTE 5: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
RqJC
RqJA
2.4
°C/W
°C/W
62.5
P R O D U C T
I N F O R M A T I O N
2
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