BUL791
NPN SILICON POWER TRANSISTOR
JULY 1991 - REVISED SEPTEMBER 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V
CEO(sus)
I
CES
I
EBO
V
BE(sat)
V
CE(sat)
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
Emitter cut-off
current
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Forward current
transfer ratio
Collector-base forward
bias diode voltage
I
C
= 100 mA
V
CE
= 700 V
V
CE
= 700 V
V
EB
=
9V
TEST CONDITIONS
L = 25 mH
V
BE
= 0
V
BE
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
2A
2A
2A
2A
2A
8A
(see Notes 4 and 5)
T
C
= 90°C
(see Notes 4 and 5)
T
C
= 90°C
10
6
2
0.94
0.86
0.25
0.3
16.5
12
6.5
850
22
14
mV
0.4
T
C
= 90°C
(see Note 3)
MIN
400
10
200
1
1
TYP
MAX
UNIT
V
µA
mA
V
V
I
B
= 400 mA
I
B
= 400 mA
I
B
= 400 mA
I
B
= 400 mA
V
CE
=
V
CE
=
V
CE
=
1V
1V
5V
I
C
= 10 mA
h
FE
V
FCB
I
CB
= 60 mA
NOTES: 3. Inductive loop switching measurement.
4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
thermal characteristics
PARAMETER
R
θ
JA
R
θ
JC
Junction to free air thermal resistance
Junction to case thermal resistance
MIN
TYP
MAX
62.5
1.66
UNIT
°C/W
°C/W
inductive-load switching characteristics at 25°C case temperature
PARAMETER
t
sv
t
fi
t
xo
t
sv
t
fi
Storage time
Current fall time
Cross over time
Storage time
Current fall time
I
C
= 2 A
L = 1 mH
I
C
= 2 A
L = 1 mH
TEST CONDITIONS
I
B(on)
= 400 mA
I
B(off)
= 800 mA
I
B(on)
= 400 mA
I
B(off)
= 250 mA
V
CC
= 40 V
V
CLAMP
= 300 V
V
CC
= 40 V
V
CLAMP
= 300 V
MIN
TYP
2.2
95
210
4
120
MAX
3
180
300
6
230
UNIT
µs
ns
ns
µs
ns
resistive-load switching characteristics at 25°C case temperature
PARAMETER
t
sv
t
fi
Storage time
Current fall time
I
C
= 2 A
V
CC
= 300 V
TEST CONDITIONS
I
B(on)
= 400 mA
I
B(off)
= 400 mA
MIN
TYP
2.2
160
MAX
3
250
UNIT
µs
ns
PRODUCT
INFORMATION
2
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