BDW73, BDW73A, BDW73B, BDW73C, BDW73D
NPN SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
BDW73
V
(BR)CEO
Collector-emitter
breakdown voltage
BDW73A
I
C
= 30 mA
I
B
= 0
(see Note 5)
BDW73B
BDW73C
BDW73D
V
CE
= 30 V
I
CEO
Collector-emitter
cut-off current
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
V
CE
= 60 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
CBO
Collector cut-off
current
V
CB
= 120 V
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 120 V
I
EBO
h
FE
V
BE(on)
V
CE(sat)
V
EC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
I
E
=
5V
3V
3V
3V
12 mA
80 mA
8A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= 3 A
I
C
= 8 A
I
C
= 3 A
I
C
= 3 A
I
C
= 8 A
I
B
= 0
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
750
100
2.5
2.5
4
3.5
V
V
V
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDW73
BDW73A
BDW73B
BDW73C
BDW73D
BDW73
BDW73A
BDW73B
BDW73C
BDW73D
BDW73
BDW73A
BDW73B
BDW73C
BDW73D
MIN
45
60
80
100
120
0.5
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
5
5
5
5
5
2
20000
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.56
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 3 A
V
BE(off)
= -3.5 V
I
B(on)
= 12 mA
R
L
= 10
Ω
†
MIN
I
B(off)
= -12 mA
t
p
= 20
µs,
dc
≤
2%
TYP
1
5
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
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