BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BDV65
V
(BR)CEO
I
C
= 30 mA
I
B
= 0
(see Note 4)
BDV65A
BDV65B
BDV65C
V
CB
= 30 V
I
CEO
Collector-emitter
cut-off current
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
I
CBO
Collector cut-off
current
V
CB
= 120 V
V
CB
= 30 V
V
CB
= 40 V
V
CB
= 50 V
V
CB
= 60 V
I
EBO
h
FE
V
CE(sat)
V
BE
V
EC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
V
EB
=
V
CE
=
I
B
=
V
CE
=
I
E
=
5V
4V
20 mA
4V
10 A
I
B
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
E
= 0
I
C
= 0
I
C
= 5 A
I
C
= 5 A
I
C
= 5 A
I
B
= 0
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
1000
2
2.5
3.5
V
V
V
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
T
C
= 150°C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
MIN
60
80
100
120
2
2
2
2
0.4
0.4
0.4
0.4
2
2
2
2
5
mA
mA
mA
V
TYP
MAX
UNIT
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1
35.7
UNIT
°C/W
°C/W
PRODUCT
INFORMATION
2
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