BDV65, BDV65A, BDV65B, BDV65C
NPN SILICON POWER DARLINGTONS
JUNE 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BDV65
60
80
Collector-emitter
BDV65A
BDV65B
BDV65C
BDV65
V(BR)CEO
IC
=
30 mA
IB = 0
(see Note 4)
V
breakdown voltage
100
120
VCB
VCB
VCB
VCB
VCB
VCB
=
30 V
40 V
50 V
60 V
60 V
80 V
I
B = 0
2
2
Collector-emitter
cut-off current
=
=
=
=
=
IB = 0
IB = 0
IB = 0
BDV65A
BDV65B
BDV65C
BDV65
ICEO
mA
2
2
IE = 0
0.4
0.4
0.4
0.4
2
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
BDV65A
BDV65B
BDV65C
BDV65
VCB = 100 V
VCB = 120 V
Collector cut-off
current
ICBO
mA
mA
VCB
VCB
VCB
VCB
=
=
=
=
30 V
40 V
50 V
60 V
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDV65A
BDV65B
BDV65C
2
2
2
Emitter cut-off
current
IEBO
hFE
VCE(sat)
VBE
VEB
VCE
IB
VCE
IE
=
=
5 V
4 V
IC = 0
5
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
IC = 5 A
IC = 5 A
IC = 5 A
IB = 0
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
1000
=
20 mA
4 V
2
V
V
V
=
2.5
3.5
Parallel diode
forward voltage
VEC
=
10 A
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
RqJC
RqJA
1
°C/W
°C/W
35.7
P R O D U C T
I N F O R M A T I O N
2
POINN [ POWER INNOVATIONS LTD ]
