BD239D, BD239E, BD239F
NPN SILICON POWER TRANSISTORS
SEPTEMBER 1981 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
V
(BR)CEO
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
I
C
= 30 mA
(see Note 5)
V
CE
= 160 V
V
CE
= 180 V
V
CE
= 200 V
V
CE
= 90 V
V
EB
=
V
CE
=
V
CE
=
I
B
=
V
CE
=
5V
4V
4V
0.2 A
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
C
= 0
I
C
= 0.2 A
I
C
=
I
C
=
I
C
=
1
Α
1A
1A
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
20
3
40
15
0.7
1.3
V
V
TEST CONDITIONS
BD239D
I
B
= 0
BD239E
BD239F
BD239D
BD239E
BD239F
MIN
120
140
160
0.2
0.2
0.2
0.3
1
mA
µA
mA
V
TYP
MAX
UNIT
I
CES
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= 10 V
V
CE
= 10 V
I
C
= 0.2 A
I
C
= 0.2 A
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
4.17
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 200 mA
V
BE(off)
= -3.4 V
I
B(on)
= 20 mA
R
L
= 150
Ω
†
MIN
I
B(off)
= -20 mA
t
p
= 20 µs, dc
≤
2%
TYP
0.3
0.8
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
POINN [ POWER INNOVATIONS LTD ]
