Philips Semiconductors
Product specification
Self Tuned Radio (STR)
TEA5757; TEA5759
AM CHARACTERISTICS
Input frequency fi = 1 MHz; m = 0.3; fm = 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B;
Vi1 measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input
level; Vn refers to pin voltages; Vi(n) refers to test circuit (see Fig.9); unless otherwise specified.
SYMBOL
V10
PARAMETER
AF output voltage
RF sensitivity input voltage
large signal voltage handling capacity m = 0.8; THD ≤ 8%
CONDITIONS
Vi1 = 5 mV
(S+N)/N = 26 dB
MIN.
36
TYP.
45
MAX.
70
UNIT
mV
Vi1
40
150
−
55
70
−
µV
mV
dB
Vi1
300
−47
PSRR
∆V7 = 100 mV (RMS);
−
V10
power supply ripple rejection
----------
100 Hz; V7 = 3.0 V
∆V7
Ii
input current (pin 2)
V44 = 0.2 V
V44 = 0.2 V
V44 = 0.2 V
−
0
−
µA
pF
dB
dB
dB
%
Ci
Gc
input capacitance (pin 2)
front-end conversion gain
−
−
4
5
10
−14
50
0.8
56
14
0
V44 = 0.9 V
−26
−
(S+N)/N
THD
signal plus noise-to-noise ratio
total harmonic distortion
IF suppression
−
Vi1 = 1 mV
−
2.0
−
α450
V10 = 30 mV
−
dB
FM CHARACTERISTICS
Input frequency fi = 100 MHz; ∆f = 22.5 kHz; fm = 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B;
Vn refers to pin voltages; Vi(n) refers to test circuit (see Fig.9); unless otherwise specified.
SYMBOL
V10
PARAMETER
AF output voltage
CONDITIONS
Vi5 = 1 mV
MIN.
40
TYP.
48
MAX.
57
UNIT
mV
Vi5
Vi5
RF sensitivity input voltage
RF limiting sensitivity
(S+N)/N = 26 dB
1
2
3.8
3.8
µV
µV
V10 at −3 dB;
0.4
1.2
V10 is 0 dB at Vi5 = 1 mV
Vi5
large signal voltage handling capacity THD < 5%
−
500
−
−
mV
dB
PSRR
∆V7 = 100 mV (RMS);
100 Hz; V7 = 3.0 V
−44
−
V10
power supply ripple rejection
----------
∆V7
Gc
12
18
22
dB
V37
front-end conversion gain
--------
Vi5
(S+N)/N
THD
signal plus noise-to-noise ratio
total harmonic distortion
Vi5 = 1 mV
−
−
62
−
dB
%
IF filter
0.3
0.8
SFE10.7MS3A20K-A
1999 Aug 26
14
NXP [ NXP ]
