Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
LN
PARAMETER
positive continuous line voltage
repetitive line voltage during switch-on or
line interruption
V
n(max)
I
line
P
tot
maximum voltage on all pins
line current
total power dissipation
TEA1110A
TEA1110AT
T
stg
T
amb
HANDLING
This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with
“MIL STD 883C - method 3015”.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient in free air;
mounted on epoxy board 40.1
×
19.1
×
1.5 mm (TEA1110A)
thermal resistance from junction to ambient in free air;
mounted on epoxy board 40.1
×
19.1
×
1.5 mm (TEA1110AT)
VALUE
85
130
storage temperature
operating ambient temperature
R
SLPE
= 20
Ω;
see Figs 10 and 11
T
amb
= 75
°C;
see Figs 10 and 11
CONDITIONS
MIN.
V
EE
−
0.4
V
EE
−
0.4
V
EE
−
0.4
−
TEA1110A
MAX.
12
13.2
V
CC
+ 0.4
140
V
V
V
UNIT
mA
−
−
−40
−25
588
384
+125
+75
mW
mW
°C
°C
UNIT
K/W
K/W
1997 Apr 22
9
PHILIPS [ NXP SEMICONDUCTORS ]
