Philips Semiconductors
Product specification
Low voltage versatile telephone
transmission circuit with dialler interface
PARAMETER
Receiving amplifier outputs
QR+ and QR−
Output impedance
(single-ended)
Voltage gain from IR to
QR+ or QR−
single-ended
differential
Gain variation with frequency
at f = 300 Hz
and f = 3400 Hz
Gain variation with temperature
at
−25 °C
and
+75 °C
w.r.t. 25
°C
without R6;
I
line
= 50 mA
Output voltage
sinewave drive
I
line
= 15 mA;
I
p
= 0 mA; THD = 2%
R4 = 100 kΩ
single-ended
differential
RL = 150
Ω
RL = 450
Ω
f = 3400 Hz;
series R = 100
Ω;
C
L
= 47 nF
Output voltage
THD = 10%;
RL = 150
Ω
R4 = 100 kΩ
I
line
= 4 mA
I
line
= 7 mA
Noise output voltage
I
line
= 15 mA;
R4 = 100 kΩ;
IR open-circuit
psophometrically
weighted; (P53 curve)
single-ended
differential
RL = 300
Ω
RL = 600
Ω
V
no(rms)
V
no(rms)
−
−
50
100
−
−
V
o(rms)
V
o(rms)
−
−
15
130
−
−
V
o(rms)
0.65
0.80
−
V
o(rms)
V
o(rms)
0.25
0.45
0.29
0.55
−
−
∆G
vT
−
±0.2
−
w.r.t. 800 Hz
∆G
vf
−0.5
−0.2
0
I
line
= 15 mA
R4 = 100 kΩ
R
L
(from QR+ or
QR−) = 300
Ω
R
L
(from QR+ or
QR−) = 600
Ω
G
v
36
37
38
G
v
30
31
32
Z
o
−
4
−
CONDITION
SYMBOL
MIN.
TYP.
TEA1067
MAX.
UNIT
Ω
dB
dB
dB
dB
V
V
V
mV
mV
µV
µV
June 1990
13
PHILIPS [ NXP SEMICONDUCTORS ]
