Philips Semiconductors
Product specification
Low voltage transmission circuits with
dialler interface
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
LN
V
LN(R)
V
LN(RM)
I
line
V
I
P
tot
PARAMETER
positive continuous line voltage
repetitive line voltage during switch-on
or line interruption
repetitive peak line voltage for a 1 ms
pulse per 5 s
line current
input voltage on all other pins
total power dissipation
TEA1062; TEA1062A
TEA1062M1; TEA1062AM1
TEA1062T; TEA1062AT
T
amb
T
stg
T
j
Notes
operating ambient temperature
storage temperature
junction temperature
R9 = 20
Ω;
R10 = 13
Ω;
see Fig.18
R9 = 20
Ω;
note 1
positive input voltage
negative input voltage
R9 = 20
Ω;
note 2
CONDITIONS
TEA1062; TEA1062A
MIN.
−
−
−
−
−
−
−
−
−
−25
−40
−
12
MAX.
13.2
28
140
V
CC
+ 0.7
−0.7
666
617
454
+75
+125
125
UNIT
V
V
V
mA
V
V
mW
mW
mW
°C
°C
°C
1. Mostly dependent on the maximum required T
amb
and on the voltage between LN and SLPE (see Figs 6, 7 and 8).
2. Calculated for the maximum ambient temperature specified (T
amb
= 75
°C)
and a maximum junction temperature of
125
°C.
HANDLING
This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with
“MIL STD 883C - method 3015”.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
TEA1062; TEA1062A
TEA1062M1; TEA1062AM1
TEA1062T; TEA1062AT (note 1)
Note
1. Mounted on glass epoxy board 28.5
×
19.1
×
1.5 mm.
PARAMETER
thermal resistance from junction to ambient in free air
75
81
110
K/W
K/W
K/W
VALUE
UNIT
1997 Sep 03
9
PHILIPS [ NXP SEMICONDUCTORS ]
