Philips Semiconductors
Product specification
Low voltage transmission circuits with
dialler interface
FEATURES
•
Low DC line voltage; operates down to 1.6 V (excluding
polarity guard)
•
Voltage regulator with adjustable static resistance
•
Provides a supply for external circuits
•
Symmetrical high-impedance inputs (64 kΩ) for
dynamic, magnetic or piezoelectric microphones
•
Asymmetrical high-impedance input (32 kΩ) for electret
microphones
•
DTMF signal input with confidence tone
•
Mute input for pulse or DTMF dialling
– TEA1062: active HIGH (MUTE)
– TEA1062A: active LOW (MUTE)
•
Receiving amplifier for dynamic, magnetic or
piezoelectric earpieces
•
Large gain setting ranges on microphone and earpiece
amplifiers
•
Line loss compensation (line current dependent) for
microphone and earpiece amplifiers
•
Gain control curve adaptable to exchange supply
•
DC line voltage adjustment facility.
QUICK REFERENCE DATA
SYMBOL
V
LN
I
line
line voltage
operating line current
normal operation
with reduced performance
I
CC
V
CC
internal supply current
supply voltage for peripherals
TEA1062
TEA1062A
G
v
voltage gain
microphone amplifier
receiving amplifier
T
amb
∆G
v
V
exch
R
exch
1997 Sep 03
operating ambient temperature
Line loss compensation
gain control
exchange supply voltage
exchange feeding bridge resistance
2
V
CC
= 2.8 V
I
line
= 15 mA
PARAMETER
CONDITIONS
I
line
= 15 mA
TEA1062; TEA1062A
GENERAL DESCRIPTION
The TEA1062 and TEA1062A are integrated circuits that
perform all speech and line interface functions required in
fully electronic telephone sets. They perform electronic
switching between dialling and speech. The ICs operate at
line voltage down to 1.6 V DC (with reduced performance)
to facilitate the use of more telephone sets connected in
parallel.
All statements and values refer to all versions unless
otherwise specified.
MIN.
3.55
11
1
−
TYP.
4.0
−
−
0.9
2.7
3.4
2.7
3.4
−
−
−
MAX.
4.25
140
11
1.35
−
−
−
−
52
31
+75
−
60
1
UNIT
V
mA
mA
mA
V
V
V
V
dB
dB
°C
I
p
= 1.2 mA; MUTE = HIGH 2.2
I
p
= 0 mA; MUTE = HIGH
I
p
= 0 mA; MUTE = LOW
−
−
44
20
−25
−
36
0.4
I
p
= 1.2 mA; MUTE = LOW 2.2
5.8
−
−
dB
V
kΩ
PHILIPS [ NXP SEMICONDUCTORS ]
