Philips Semiconductors
Product specification
Low voltage transmission circuits with
dialler interface
SYMBOL
∆G
v
PARAMETER
CONDITIONS
TEA1062; TEA1062A
MIN.
−8
TYP.
−
MAX.
UNIT
Gain adjustment inputs GAS1 and GAS2 (pins 2 and 3)
transmitting amplifier gain variation by
adjustment of R7 between
GAS1 and GAS2
0
dB
Sending amplifier output LN (pin 1)
V
LN(rms)
output voltage (RMS value)
THD = 10%
I
line
= 4 mA
I
line
= 15 mA
V
no(rms)
noise output voltage (RMS value)
I
line
= 15 mA; R7 = 68 kΩ;
200
Ω
between MIC− and
MIC+; psophometrically
weighted (P53 curve)
−
1.7
−
0.8
2.3
−69
−
−
−
V
V
dBmp
Receiving amplifier input IR (pin 10)
Z
i
Z
o
G
v
∆G
vf
∆G
vT
V
o(rms)
input impedance
−
−
I
line
= 15 mA; R
L
= 300
Ω
(from pin 9 to pin 4)
f = 300 and 3400 Hz
without R6; I
line
= 50 mA;
T
amb
=
−25
and +75
°C
THD = 2%; sine wave drive;
R4 = 100 kΩ; I
line
= 15 mA;
I
p
= 0 mA
R
L
= 150
Ω
R
L
= 450
Ω
V
o(rms)
V
no(rms)
output voltage (RMS value)
noise output voltage (RMS value)
THD = 10%; R4 = 100 kΩ;
R
L
= 150
Ω;
I
line
= 4 mA
I
line
= 15 mA; R4 = 100 kΩ;
IR open-circuit
psophometrically weighted
(P53 curve); R
L
= 300
Ω
0.22
0.3
−
−
0.33
0.48
15
50
−
−
−
−
V
V
mV
µV
29.5
−
−
21
−
−
32.5
−
−
kΩ
Ω
dB
dB
dB
Receiving amplifier output QR (pin 4)
output impedance
voltage gain from IR to QR
gain variation with frequency
referenced to 800 Hz
gain variation with temperature
referenced to 25
°C
output voltage (RMS value)
4
31
±0.2
±0.2
Gain adjustment input GAR (pin 5)
∆G
v
receiving amplifier gain variation by
adjustment of R4 between GAR and QR
−11
−
0
dB
Mute input (pin 12)
V
IH
V
IL
I
MUTE
HIGH level input voltage
LOW level input voltage
input current
1.5
−
−
−
−
8
V
CC
0.3
15
V
V
µA
1997 Sep 03
12
PHILIPS [ NXP SEMICONDUCTORS ]
