Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
MGS712
MGS711
40
40
handbook, halfpage
handbook, halfpage
P
P
d
o
(W)
30
(W)
30
20
10
0
20
10
(1)
(2)
0
8
0
4
8
12
16
12
16
20
V
(V)
P
(W)
P
o
fi = 1 kHz; RL = 4 Ω; 2 channel driven.
(1) THD = 10%.
fi = 1 kHz; RL = 4 Ω; VP = 24 V; 4 channel driven.
(2) THD = 0.5%.
Fig.17 Power dissipation as a function of output
power; SE mode.
Fig.18 Output power as a function of supply
voltage; BTL mode.
MGS714
MGS713
40
16
handbook, halfpage
handbook, halfpage
P
P
o
o
(W)
30
(W)
12
20
8
(1)
(1)
(2)
10
4
(2)
0
0
8
12
16
20
24
8
12
16
20
24
V
(V)
V
(V)
P
P
fi = 1 kHz; RL = 8 Ω; 2 channel driven.
(1) THD = 10%.
fi = 1 kHz; RL = 4 Ω; 2 channel driven.
(1) THD = 0.5%.
(2) THD = 0.5%
(2) THD = 10%
Fig.19 Output power as a function of supply
voltage; BTL mode.
Fig.20 Output power as a function of supply
voltage; SE mode.
2000 Apr 18
13
NXP [ NXP ]
