Philips Semiconductors
Product specification
Low voltage mono/stereo power amplifier
CHARACTERISTICS
V
P
=
3 V; f
=
1 kHz; R
L
=
32
Ω;
T
amb
=
25
°C;
unless otherwise specified
PARAMETER
Supply
Supply voltage
Total quiescent current
Bridge-tied load application (BTL);
see Fig.4
Output power
*
V
P
= 3,0 V; d
tot
= 10%
V
P
= 4,5 V; d
tot
= 10% (R
L
= 64
Ω)
Voltage gain
Noise output voltage (r.m.s. value)
R
S
= 5 kΩ; f = 1 kHz
R
S
= 0
Ω;
f = 500 kHz; B = 5 kHz
D.C. output offset voltage (at R
S
= 5 kΩ)
Input impedance (at R
S
=
∞)
Input bias current
Stereo application;
see Fig.5
Output power
*
V
P
= 3,0 V; d
tot
= 10%
V
P
= 4,5 V; d
tot
= 10%
Voltage gain
Noise output voltage (r.m.s. value)
R
S
= 5 kΩ; f = 1 kHz
R
S
= 0
Ω;
f = 500 kHz; B = 5 kHz
Channel separation
R
S
= 0
Ω;
f = 1 kHz
Input impedance (at R
S
=
∞)
Input bias current
*
Output
TDA7050T
SYMBOL
MIN.
−
TYP.
MAX.
UNIT
V
P
I
tot
1,6
−
6,0
4
V
mA
3,2
P
o
P
o
G
v
V
no(rms)
V
no(rms)
|∆V|
|Z
i
|
I
i
−
−
−
−
−
−
1
−
140
150
32
140
tbf
−
−
40
−
−
−
−
−
70
−
−
mW
mW
dB
µV
µV
mV
MΩ
nA
P
o
P
o
G
v
V
no(rms)
V
no(rms)
α
|Z
i
|
I
i
−
−
24.5
−
−
30
2
−
35
75
26
100
tbf
40
−
20
−
−
27.5
−
−
−
−
−
mW
mW
dB
µV
µV
dB
MΩ
nA
power is measured directly at the output pins of the IC. It is shown as a function of the supply voltage in Fig.2
(BTL application) and Fig.3 (stereo application).
July 1994
4
PHILIPS [ NXP SEMICONDUCTORS ]
