Philips Semiconductors
Product specification
FM radio circuit for MTS
TDA7021T
AC CHARACTERISTICS (MONO OPERATION)
V
P
= 3 V; T
amb
= 25
°C;
measured in Fig.5; f
rf
= 96 MHz modulated with
∆f
=
±22,5
kHz; f
m
= 1 kHz; EMF = 0,3 mV
(e.m.f. at a source impedance of 75
Ω);
r.m.s. noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless
otherwise specified
PARAMETER
Sensitivity (e.m.f.)
for
−3
dB limiting
for
−3
dB muting
for (S+N)/N = 26 dB
Signal handling (e.m.f.)
Signal-to-noise ratio
Total harmonic distortion
AM suppression of output
voltage
ratio of AM signal
(f
m
= 1 kHz; m = 80%)
to FM signal (f
m
=
1 kHz;
∆f
= 75 kHz)
Ripple rejection
Oscillator voltage (r.m.s. value)
Variation of oscillator frequency
with temperature
V
P
= 1 V
∆f
osc
----------------
-
∆
T
amb
S
+300
S
−300
AFC range
Mute range
Audio bandwidth
∆V
o
= 3 dB;
measured with 50
µs
pre-emphasis
AF output voltage
(r.m.s. value)
AF output current
max. d.c. load
max. a.c. load (peak value)
THD = 10%
I
o(dc)
I
o(ac)
−100
−
−
3
+100
−
µA
mA
R
L
(pin 14) = 100
Ω
V
o(rms)
−
90
−
mV
B
−
10
−
kHz
±∆f
rf
±∆f
rf
−
5
−
kHz/°C
∆V
P
= 100 mV;
f = 1 kHz
RR
V
5-4(rms)
−
−
30
250
−
−
dB
mV
AMS
−
50
−
dB
∆f
=
±
22,5 kHz
∆f
=
±
75 kHz
THD < 10%;
∆f
=
±
75 kHz
EMF
(S+N)/N
THD
THD
−
−
−
−
200
60
0,7
2,3
−
−
−
−
mV
dB
%
%
CONDITIONS
see Fig.3
muting disabled
EMF
EMF
EMF
−
−
−
4,0
5,0
7,0
−
−
−
µV
µV
µV
SYMBOL
MIN.
TYP.
MAX.
UNIT
Selectivity
see Fig.9;
no modulation
−
−
−
−
46
30
160
120
−
−
−
−
dB
dB
kHz
kHz
May 1992
5
PHILIPS [ NXP SEMICONDUCTORS ]
