Philips Semiconductors
Product specification
FM radio circuit
TDA7000
A.C. CHARACTERISTICS
V = 4,5 V; T
= 25 °C; measured in Fig.4 (mute switch open, enabled); f = 96 MHz (tuned to max. signal
rf
P
amb
at 5 µV e.m.f.) modulated with ∆f = ± 22,5 kHz; f = 1 kHz; EMF = 0,2 mV (e.m.f. voltage at a source impedance of
m
75 Ω); r.m.s. noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless otherwise specified.
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Sensitivity (see Fig.3)
(e.m.f. voltage)
for −3 dB limiting;
muting disabled
for −3 dB muting
for S/N = 26 dB
EMF
EMF
EMF
−
−
−
1,5
−
−
−
µV
6
µV
µV
5,5
Signal handling (e.m.f. voltage)
for THD < 10%; ∆f = ± 75 kHz
Signal-to-noise ratio
EMF
S/N
−
−
200
60
−
−
mV
dB
Total harmonic distortion
at ∆f = ± 22,5 kHz
THD
THD
−
−
0,7
2,3
−
−
%
%
at ∆f = ± 75 kHz
AM suppression of output voltage
(ratio of the AM output signal
referred to the FM output signal)
FM signal: f = 1 kHz; ∆f = ± 75 kHz
m
AM signal: f = 1 kHz; m = 80%
AMS
RR
−
−
−
50
−
−
−
dB
dB
mV
m
Ripple rejection (∆V = 100 mV;
P
f = 1 kHz)
10
Oscillator voltage (r.m.s. value)
at pin 6
V
250
6-5(rms)
Variation of oscillator frequency
with supply voltage (∆V = 1 V)
∆f
−
−
−
−
60
−
−
−
−
kHz/V
dB
P
osc
Selectivity
S
S
45
+300
−300
35
dB
A.F.C. range
∆f
± 300
kHz
rf
Audio bandwidth at ∆V = 3 dB
o
measured with pre-emphasis (t = 50 µs)
B
−
−
10
75
−
−
kHz
mV
A.F. output voltage (r.m.s. value)
at R = 22 kΩ
V
o(rms)
L
Load resistance
at V = 4,5 V
R
R
−
−
−
−
22
47
kΩ
kΩ
P
L
at V = 9,0 V
P
L
May 1992
5
NXP [ NXP ]
