Philips Semiconductors
Si4800
N-channel enhancement mode field-effect transistor
03aa33
2.5
VGS(th)
(V)
2
max
10-1
ID
(A)
10-2
03aa36
typ
1.5
10-3
min
typ
max
1
min
10-4
0.5
10-5
0
-60
0
60
120
Tj ( C)
o
10-6
180
0
0.5
1
1.5
2
2.5
3
VGS (V)
I
D
= 250
µA;
V
DS
= V
GS
T
j
= 25
°C;
V
DS
= 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
104
Ciss
Coss
Crss
(pF)
103
03af89
Ciss
Coss
Crss
102
10-1
1
10
VDS (V)
102
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 08412
© Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 — 13 July 2001
7 of 13
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