Philips Semiconductors
Product specification
Low-voltage high performance mixer FM IF system
SA616
BLOCK DIAGRAM
20
19
18
17
16
15
14
13
12
11
IF
AMP
MIXER
RSSI
LIMITER
QUAD
OSCILLATOR
+ –
V
REG
E
B
– +
AUDIO
1
2
3
4
5
6
7
8
9
10
SR00368
Figure 2. Block Diagram
DC ELECTRICAL CHARACTERISTICS
V
CC
= +3V, T
A
= 25
°
C; unless otherwise stated.
SYMBOL
V
CC
I
CC
PARAMETER
Power supply voltage range
DC current drain
TEST CONDITIONS
LIMITS
MIN
2.7
3.5
TYP
MAX
7.0
5.0
UNITS
V
mA
AC ELECTRICAL CHARACTERISTICS
T
A
= 25°C; V
CC
= +3V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step-up; IF frequency = 455kHz; R17 = 2.4kΩ
and R18 = 3.3kΩ; RF level = -45dBm; FM modulation = 1kHz with
±8kHz
peak deviation. Audio output with de-emphasis filter and C-message
weighted filter. Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical
characterristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of
the listed parameters.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN
TYP
150
150
6.8
f1 = 45.0; f2 = 45.06MHz
Input RF level = -52dBm
Matched 14.5dBV step-up
50Ω source
RF input resistance
RF input capacitance
Mixer output resistance
IF section
IF amp gain
Limiter gain
Input limiting -3dB, R
17a
= 2.4k, R
17b
= 3.3k
AM rejection
Audio level
SINAD sensitivity
THD
Total harmonic distortion
50Ω source
50Ω source
Test at Pin 18
80% AM 1kHz
Gain of two (2kΩ AC load)
IF level -110dBm
-30
60
44
58
-105
40
120
17
-45
dB
dB
dBm
dB
mV
dB
dB
(Pin 20)
1.25
Single-ended input
11
-9
17
+2.5
8
3.0
1.5
4.0
MAX
UNITS
Mixer/Osc section (ext LO = 220mV
RMS
)
f
IN
f
OSC
Input signal frequency
Crystal oscillator frequency
Noise figure at 45MHz
Third-order input intercept point (50Ω
source)
Conversion power gain
MHz
MHz
dB
dBm
dB
dB
kΩ
pF
kΩ
1997 Nov 07
3
PHILIPS [ NXP SEMICONDUCTORS ]
