Philips Semiconductors
Product specification
1GHz low voltage LNA and mixer
SA611
AC ELECTRICAL CHARACTERISTICS
V
CC
= +3.0V, T
A
= 25
°
C; RF
IN
= 881MHz, f
VCO
= 964MHz; unless otherwise stated.
LIMITS
SYMBOL
Low Noise Amplifier
f
RF
S
21
S
21
∆S
21
/∆T
∆S
21
/∆f
S
12
S
11
S
22
P
-1dB
IP3
NF
t
ON
t
OFF
Mixer
PG
C
S
11M
NF
M
P
-1dB
IP3
M
IP
2INT
P
RFM-IF
P
LO-IF
P
LO-RFM
P
LO-RF
Mixer power conversion gain: R
P
= R
L
= 1.2kΩ,
Mixer input match
Mixer SSB noise figure
Mixer input 1dB gain compression
Mixer input third order intercept
Mixer input second order intercept
Mixer RF feedthrough
LO feedthrough to IF
LO to mixer input feedthrough
LO to LNA input feedthrough
RF
IN
= -28dBm
LO = -0dBm
f
RF
= 881MHz, f
LO
= 964MHz,
f
IF
= 83MHz
Ext. impedance matching req.
8.7
-10
12
-14.5
7.0
15
-45
-23
-36
-38
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
RF input frequency range
Amplifier gain
Amplifier gain in power-down mode
Gain temperature sensitivity enabled
Gain frequency variation
Amplifier reverse isolation
Amplifier input match
Amplifier output match
Amplifier input 1dB gain compression
Amplifier input third order intercept
Amplifier noise figure
Amplifier turn-on time (Enable Lo
→
Hi)
Amplifier turn-off time (Enable Hi
→
Lo)
800MHz - 1.0GHz
@ 881 MHz
With ext. impedance matching
800
15
-28
0.006
±0.013
-28
-10
-10
-20
-7
1.7
120
0.3
1000
MHz
dB
dB
dB/°C
dB/MHz
dB
dB
dB
dBm
dBm
dB
µs
µs
PARAMETER
TEST CONDITIONS
–3s
TYP
+3s
UNITS
Overall System
G
SYS
System gain
LNA + Mixer
23.0
23.7
24.4
dB
1999 Mar 26
4
PHILIPS [ NXP SEMICONDUCTORS ]
