Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
-
25dB,
-
10dB,
1500/50
Ω
PAD 50/50
Ω
PAD
-
29dB,
929/50
Ω
PAD
-
10.6dB,
50/50
Ω
PAD
-
36dB,
156k/50
Ω
PAD
50.5
3880
2430
C24
SW9
96.5
71.5
51.5
96.5
32.8
71.5
C19
SW6
C18
C17
51.7
32.6
1.3k
C16
SW5
C15
C20
C22
FLT1
C23
SW8
C21
SW7
R17
5.1k
FLT2
20
19
18
17
16
15
14
13
12
11
IF AMP
700
LIMITER
MIXER
OSCILLATOR
RSSI
EMITTER
BASE
MUTE
SWITCH
QUAD
DETECTOR
1
2
3
4
5
6
7
8
9
10
C1
SW1
SW3
C8
SW4
C9
R9
R10
R11
C2
L1
C7
C10
SW2
R4
51.1
C5
L2
C6
C3
R2
C4 EXT.
LOC
OSC
44.545
45.06
MHZ
MINI–CIRCUIT ZSC2–1B
X1
R7
30.5
R6
178
R8
39.2
MUTE
V
CC
”C” WEIGHTED
AUDIO
MEASUREMENT
CIRCUIT
C26
C11
C12
C13
IFT1
R1
R3
C14
45MHZ
RSSI
AUDIO UNMUTED
AUDIO
OUTPUT
C1
C2
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C17
C18
Automatic Test Circuit Component List
C21 100nF +10% Monolithic Ceramic
47pF NPO Ceramic
C23 100nF +10% Monolithic Ceramic
180pF NPO Ceramic
C25 100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
C26 390pF +10% Monolithic Ceramic
22pF NPO Ceramic
Flt 1 Ceramic Filter Murata SFG455A3 or equiv
1nF Ceramic
Flt 2 Ceramic Filter Murata SFG455A3 or equiv
10.0pF NPO Ceramic
IFT 1 455kHz 270µH TOKO #303LN-1129
100nF +10% Monolithic Ceramic
L1 300nH TOKO #5CB-1055Z
6.8
µ
F Tantalum (minimum) *
L2 0.8
µ
H TOKO 292CNS–T1038Z
100nF +10% Monolithic Ceramic
X1 44.545MHz Crystal ICM4712701
15nF +10% Ceramic
R9 100k +1% 1/4W Metal Film
150pF +2% N1500 Ceramic
R17 5.1k +5% 1/4W Carbon Composition
100nF +10% Monolithic Ceramic
R10 100k +1% 1/4W Metal Film (optional)
10pF NPO Ceramic
R11 100k +1% 1/4W Metal Film (optional)
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
SR00337
* NOTE: This value can be reduced when a battery is the power source.
Figure 3. SA605 45MHz Test Circuit (Relays as shown)
1997 Nov 07
6
PHILIPS [ NXP SEMICONDUCTORS ]
