Philips Semiconductors
Product specification
SMA fast soft-recovery
controlled avalanche rectifiers
SYMBOL
V
RMS
RS1A
RS1B
RS1D
RS1G
RS1J
RS1K
RS1M
I
F(AV)
I
FSM
average forward current
non-repetitive peak forward current
averaged over any 20 ms period;
T
tp
= 110
°C;
see Fig.2
t = 8.3 ms half sine wave;
T
j
= 25
°C
prior to surge;
V
R
= V
RRMmax
See Fig.3
PARAMETER
root mean square voltage
−
−
−
−
−
−
−
−
−
CONDITIONS
MIN.
RS1 series
MAX.
35
70
140
280
420
560
700
1
25
V
V
V
V
V
V
V
A
A
UNIT
T
stg
T
j
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
t
rr
PARAMETER
forward voltage
reverse current
reverse recovery time
RS1A to RS1J
RS1K and RS1M
C
d
diode capacitance
V
R
= 4 V; f = 1 MHz; see Fig.6
CONDITIONS
I
F
= 1 A; see Fig.4
V
R
= V
RRMmax
; see Fig.5
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.5
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.9
−
−
−
−
−
7
TYP.
5
50
250
300
−
MAX.
1.3
V
µA
µA
ns
ns
pF
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point; see Fig.7
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
≥35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm.
For more
information please refer to the
‘General Part of associated Handbook’.
CONDITIONS
VALUE
27
100
150
UNIT
K/W
K/W
K/W
2000 Feb 14
3
PHILIPS [ NXP SEMICONDUCTORS ]
