Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
104
23
PZTA92
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−200
V
I
C
= 0; V
BE
=
−5
V
I
C
=
−1
mA; V
CE
=
−10
V; note 1
I
C
=
−10
mA; V
CE
=
−10
V; note 1
I
C
=
−30
mA; V
CE
=
−10
V; note 1
V
CEsat
V
BEsat
C
c
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
transition frequency
I
C
=
−20
mA; I
B
=
−2
mA
I
C
=
−20
mA; I
B
=
−2
mA
I
E
= 0; V
CB
=
−20
V; f = 1 MHz
I
C
=
−10
mA; V
CE
=
−20
V; f = 100 MHz
−
−
25
40
25
−
−
−
50
MIN.
MAX.
−20
−100
−
−
−
−500
−900
6
−
mV
mV
pF
MHz
UNIT
nA
nA
1999 Apr 14
3
PHILIPS [ NXP SEMICONDUCTORS ]
