Philips Semiconductors
Product specification
PNP switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
PZT2907A
VALUE
106
25
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−50
V
I
E
= 0; V
CB
=
−50
V; T
amb
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−0.1
mA; V
CE
=
−10
V
I
C
=
−1
mA; V
CE
=
−10
V
I
C
=
−10
mA; V
CE
=
−10
V
I
C
=
−150
mA; V
CE
=
−10
V; note 1
I
C
=
−500
mA; V
CE
=
−10
V; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−2
V; f = 1 MHz
I
C
=
−50
mA; V
CE
=
−20
V;
f = 100 MHz; note 1
I
Con
=
−150
mA; I
Bon
=
−15
mA;
I
Boff
= 15 mA
−
−
−
75
100
100
100
50
−
−
−
−
−
−
200
MIN.
MAX.
−10
−10
−50
−
−
−
300
−
−400
−1.6
−1.3
−2.6
8
30
−
mV
V
V
V
pF
pF
MHz
UNIT
nA
µA
nA
Switching times (between 10% and 90% levels);
(see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
−
−
−
−
−
−
40
12
30
365
300
65
ns
ns
ns
ns
ns
ns
1999 Apr 14
3