Philips Semiconductors
Product specification
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
PZT2222A
VALUE
109
28
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
amb
= 125
°C
I
C
= 0; V
EB
= 5 V
I
C
= 0.1 mA; V
CE
= 10 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V;
T
amb
=
−55 °C
I
C
= 150 mA; V
CE
= 1 V; note 1
I
C
= 150 mA; V
CE
= 10 V; note 1
I
C
= 500 mA; V
CE
= 10 V; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA; T
amb
= 25
°C
−
−
−
35
50
75
35
50
100
40
−
−
0.6
−
−
−
300
−
−
−
−
−
−
MIN.
MAX.
10
10
10
−
−
−
−
−
300
−
300
1
1.2
2
8
25
−
mV
V
V
V
pF
pF
MHz
UNIT
nA
µA
nA
Switching times (between 10% and 90% levels);
(see Fig.2)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
35
10
25
250
200
60
ns
ns
ns
ns
ns
ns
1999 Apr 14
3
PHILIPS [ NXP SEMICONDUCTORS ]
