Philips Semiconductors
Product specification
High-speed diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
PMLL4148
PMLL4448
I
R
I
R
C
d
t
rr
reverse current
reverse current; PMLL4448
diode capacitance
reverse recovery time
see Fig.3
I
F
= 10 mA
I
F
= 5 mA
I
F
= 100 mA
V
R
= 20 V; see Fig.5
CONDITIONS
PMLL4148; PMLL4448
MIN.
−
620
−
−
−
1
MAX.
V
UNIT
720
1
25
50
3
4
4
mV
V
nA
µA
µA
pF
ns
V
R
= 20 V; T
j
= 150
°C;
see Fig.5
V
R
= 20 V; T
j
= 100
°C;
see Fig.5
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 50 mA;
t
r
=
20 ns; see Fig.8
V
fr
forward recovery voltage
−
2.5
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
300
350
UNIT
K/W
K/W
1999 May 27
3
PHILIPS [ NXP SEMICONDUCTORS ]
