Philips Semiconductors
Product specification
NPN switching transistor
PMBT3904
MGD834
handbook, full pagewidth
160
hFE
120
80
40
0
10
−2
10
−1
1
10
10
2
IC (mA)
10
3
V
CE
= 1 V.
Fig.2 DC current gain; typical values.
andbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
V
BB
=
−1.9
V; V
CC
= 3 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
1999 Apr 27
4