NXP Semiconductors
Product data sheet
NPN switching transistor
PMBT3904
SYMBOL
f
T
F
PARAMETER
transition frequency
noise figure
CONDITIONS
I
C
= 10 mA; V
CE
= 20 V;
f = 100 MHz
I
C
= 100
µA;
V
CE
= 5 V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
MIN.
300
−
−
5
MAX.
UNIT
MHz
dB
Switching times (between 10% and 90% levels);
see Fig.3
t
d
t
r
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
delay time
rise time
storage time
fall time
I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
=
−1
mA
−
−
−
−
35
35
200
50
ns
ns
ns
ns
handbook, halfpage
500
MGU821
MGU822
handbook, halfpage
250
h FE
400
(1)
IC
(mA)
(1)
(2)
(3)
(4)
(5) (6)
(7)
200
300
150
(8)
(2)
(9)
200
100
(10)
(3)
100
50
0
10
−1
1
10
10
2
I C (mA)
10
3
0
0
2
4
6
8
10
VCE (V)
T
amb
= 25
°C.
V
CE
= 1 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
(1) I
B
= 5.5 mA.
(2) I
B
= 5 mA.
(3) I
B
= 4.5 mA.
(4) I
B
= 3.5 mA.
(5) I
B
= 3 mA.
(6) I
B
= 2.5 mA.
(7) I
B
= 2 mA.
(8) I
B
= 1.5 mA.
(9) I
B
= 1 mA.
(10) I
B
= 0.5 mA.
Fig.3
Fig.2 DC current gain; typical values.
Collector current as a function of
collector-emitter voltage.
2004 Jan 12
4
PHILIPS [ NXP SEMICONDUCTORS ]
