Philips Semiconductors
Product specification
PNP switching transistors
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 60 V).
APPLICATIONS
•
Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complements: PMBT2222 and PMBT2222A.
MARKING
TYPE NUMBER
PMBT2907
PMBT2907A
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
MARKING CODE
(1)
∗2B
∗2F
Top view
handbook, halfpage
PMBT2907; PMBT2907A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
PARAMETER
collector-base voltage
collector-emitter voltage
PMBT2907
PMBT2907A
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
−40
−60
−5
−600
−800
−200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
CONDITIONS
open emitter
−
MIN.
MAX.
−60
UNIT
V
1999 Apr 27
2
PHILIPS [ NXP SEMICONDUCTORS ]
