PMBT2222; PMBT2222A
NXP Semiconductors
NPN switching transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
PMBT2222
open emitter
-
-
60
75
V
V
PMBT2222A
VCEO
collector-emitter voltage
PMBT2222
open base
-
-
30
40
V
V
PMBT2222A
VEBO
emitter-base voltage
PMBT2222
open collector
-
5
V
PMBT2222A
-
6
V
IC
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
-
600
800
200
250
150
+150
+150
mA
mA
mA
mW
°C
°C
°C
ICM
IBM
Ptot
Tj
-
-
[1]
Tamb ≤ 25 °C
-
-
Tamb
Tstg
−65
−65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Thermal characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
[1]
Rth(j-a)
thermal resistance from in free air
junction to ambient
-
-
500
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMBT2222_PMBT2222A
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 6 — 12 November 2010
3 of 12
NXP [ NXP ]
