Philips Semiconductors
Product specification
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
C
= 0; V
EB
=
−5
V
V
CE
=
−1
V; (see Fig.2)
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−50
mA; note 1
I
C
=
−100
mA; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation voltage I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA; note 1
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA; note 1
I
E
= i
e
= 0; V
CB
=
−5
V; f = 100 MHz
I
C
= i
c
= 0; V
EB
=
−0.5
V; f = 100 MHz
I
C
=
−100 µA;
V
CE
=
−5
V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz;
I
Con
=
−10
mA; I
Bon
=
−1
mA;
I
Boff
= 1 mA
60
80
100
60
30
−
−
−
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
PMBS3906
VALUE
500
UNIT
K/W
MAX.
−50
−50
−
−
300
−
−
−250
−400
−850
−950
4.5
12
−
4
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
I
C
=
−10
mA; V
CE
=
−20
V; f = 100 MHz 150
Switching times (between 10% and 90% levels);
(see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
−
−
−
−
−
−
100
50
50
700
600
100
ns
ns
ns
ns
ns
ns
1999 Apr 22
3
PHILIPS [ NXP SEMICONDUCTORS ]
