NXP Semiconductors
PHC2300
Complementary enhancement mode MOS transistors
0.5
I
SD
(A)
0.4
mda238
1.25
k
1
mld847
0.3
0.75
0.2
0.5
0.1
0.25
0
0
0.2
0.4
0.6
1
0.8
V
SD
(V)
0
−50
0
50
100
T
j
(°C)
150
V
DS
= V
GS
; I
D
= 1 mA.
Fig 15. Source-drain current as a function of
source-drain diode voltage; N-channel; typical
values
1.4
k
1.2
mbh438
Fig 16. Temperature coefficient of gate-source
threshold voltage as a function temperature;
N-channel; typical values
160
C
(pF)
120
mda236
1.0
80
C
iss
0.8
40
C
oss
C
rss
0.6
−75
−25
0
25
75
125
175
T
j
(°C)
0
−5
−10
−15
−20
−25
V
DS
(V)
V
DS
= V
GS
; I
D
= -1 mA.
Fig 17. Temperature coefficient of gate-source
threshold voltage as a function temperature;
P-channel; typical values
Fig 18. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
9 of 14
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