NXP Semiconductors
PHC2300
Complementary enhancement mode MOS transistors
−10
I
D
(A)
−1
mgl245
−10−
1
(1)
P
δ
=
t
p
T
−10−
2
t
p
DC
t
T
−10−
3
−1
−10
−10
2
V
DS
(V)
−10
3
δ
= 0.01; T
sp
= 80 °C.
(1) R
DSon
limitation.
Fig 3.
SOAR; P-channel
5. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to solder point
Conditions
Min
-
Typ
-
Max
43
Unit
K/W
10
2
R
th js
(K/W)
10
(1)
(2)
(3)
(4)
(5)
(6)
(7)
mda244
1
(8)
(9)
(10)
P
δ
=
t
p
T
t
p
t
T
10
−1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
(1)
δ
= 1.00. (2)
δ
= 0.75. (3)
δ
= 0.5. (4)
δ
= 0.33. (5)
δ
= 0.2.
(6)
δ
= 0.1. (7)
δ
= 0.05. (8)
δ
= 0.02. (9)
δ
= 0.01. (10)
δ
= 0.
Fig 4.
Transient thermal resistance from junction to soldering point as a function of pulse time for N- and
P-channel; typical values
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
4 of 14
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