NXP Semiconductors
PESD1CAN-U
CAN bus ESD protection diode
10
2
aaa-007015
1.2
P
PPM
006aab321
P
PPM
(W)
P
PPM(25°C)
0.8
10
0.4
1
10
-1
0
1
t
p
(ms)
10
0
50
100
150
T
j
(°C)
200
T
amb
= 25
C
Fig 3.
Rated peak pulse power as a function of
square pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
I
PPM
I
PP
10
C
d
(pF)
8
aaa-007016
-V
CL
-V
BR
-V
RWM
I
R
I
RM
-I
RM
-I
R
V
RWM
V
BR
V
CL
6
-
+
4
-30
-10
10
V
R
(V)
30
-I
PP
-I
PPM
006aab325
f = 1 MHz; T
amb
= 25
C
.
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
V-I characteristics for a bidirectional ESD
protection diode
PESD1CAN-U
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 27 March 2013
4 of 12
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