NTAG213F/216F
NXP Semiconductors
NFC Forum T2T IC with 144/888 bytes user memory and field detection
1.2 Simple deployment and user convenience
NTAG21xF offers specific features designed to improve integration and user convenience:
• The fast read capability allows to scan the complete NDEF message with only one
FAST_READ command, thus reducing the communication time overhead
• The improved RF performance allows for more flexibility in the choice of shape,
dimension and materials
• The HXSON4 package delivery form is the same one used as the NTAG203F with the
same pinning
• The field detect functionality is based on an open-drain implementation that requires
only one pull up resistor
1.3 Security
• Manufacturer programmed 7-byte UID for each device
• Capability container with one time programmable bits
• Field programmable read-only locking function per page up to 0Fh page (per 2 pages
(NTAG 213F) or per 16 pages (NTAG 216F) for the extended memory section)
• ECC based originality signature
• 32-bit password protection to prevent unauthorized memory operations
1.4 Field detection
The NTAG21xF product family features an RF field detection functionality based on Open
Drain (see Figure 2) that can be configured with different RF signal or actions trigger:
• upon any RF field presence
• upon the first Start-of-Frame (start of the communication)
• upon the selection of the tag
The corresponding output signal can be used as interrupt source to e.g. wake up an
embedded microcontroller or trigger further actions - e.g. Bluetooth and WiFi pairing. For
more information on this feature, please refer to Ref. 8.
V
FD pin
pull-up resistor
FD pin
LA
LB
V
DD
NTAG21xF
GND
time
GND
RF field ON RF field OFF
aaa-008522
Fig 2. Field detection implementation in NTAG21xF
NTAG213F_216F
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© NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.1 — 28 August 2013
262231
2 of 56
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