Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−200
V
I
C
= 0; V
EB
=
−3
V
V
CE
=
−10
V; note 1
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−30
mA
V
CEsat
V
BEsat
C
c
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
I
C
=
−20
mA; I
B
=
−2
mA
I
C
=
−20
mA; I
B
=
−2
mA
I
E
= i
e
= 0; V
CB
=
−20
V;
f = 1 MHz
25
40
25
−
−
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
MMBTA92
UNIT
K/W
MAX.
−250
−100
UNIT
nA
nA
−500
−900
6
−
mV
mV
pF
MHz
I
C
=
−10
mA; V
CE
=
−20
V; 50
f = 100 MHz
2000 Apr 11
3
PHILIPS [ NXP SEMICONDUCTORS ]
