Philips Semiconductors
Product specification
NPN switching transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
Telephony and professional communication equipment.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: MMBT3906.
MARKING
TYPE NUMBER
MMBT3904
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
MARKING CODE
(1)
7A∗
Top view
handbook, halfpage
MMBT3904
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current DC
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
60
40
6
200
200
100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2000 Apr 11
2
PHILIPS [ NXP SEMICONDUCTORS ]
