Philips Semiconductors
Product specification
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
C
= 0; V
EB
= 6 V
V
CE
= 1 V; see Fig.2; note 1
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
BE
= 500 mV;
f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V;
f = 100 MHz
I
C
= 100
µA;
V
CE
= 5 V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
60
80
100
60
30
−
−
650
−
−
−
300
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
MMBT3904
UNIT
K/W
MAX.
50
50
UNIT
nA
nA
300
−
−
200
300
850
950
4
8
−
5
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10% and 90% levels);
see Fig.3
t
d
t
r
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
delay time
rise time
storage time
fall time
I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
=
−1
mA
−
−
−
−
35
35
200
50
ns
ns
ns
ns
2002 Oct 04
3
PHILIPS [ NXP SEMICONDUCTORS ]
