NXP Semiconductors
MAC97A8
4Q Triac
9. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
-
-
-
-
-
-
-
1
2
2
4
1
5
1
2
5
mA
mA
mA
mA
mA
mA
mA
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
5
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
5
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
10
10
10
10
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 0.85 A; Tj = 25 °C; Fig. 10
-
-
-
1
10
mA
V
VT
VGT
on-state voltage
gate trigger voltage
1.4
0.9
1.9
1.5
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
V
VD = 400 V; IT = 0.1 A; Tj = 110 °C;
Fig. 11
0.1
-
0.7
3
-
V
ID
off-state current
VD = 600 V; Tj = 110 °C
100
µA
Dynamic characteristics
dVD/dt
rate of rise of off-state VDM = 402 V; Tj = 110 °C; (VDM = 67%
30
45
-
V/µs
voltage
of VDRM); exponential waveform; gate
open circuit; Fig. 12
dVcom/dt
rate of change of
VD = 600 V; Tj = 50 °C; dIcom/dt = 0.3 A/
ms; IT = 0.84 A; gate open circuit
-
-
5
2
-
-
V/µs
µs
commutating voltage
tgt
gate-controlled turn-on ITM = 1 A; VD = 600 V; IG = 25 mA; dIG/
time
dt = 5 A/µs
MAC97A8
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Product data sheet
7 November 2013
7 / 13
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