Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF640, IRF640S
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
Mounting Base temperature, Tmb (C)
150
175
10
Transient thermal impedance, Zth j-mb (K/W)
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
P
D
tp
D = tp/T
0.01
single pulse
T
0.001
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Pulse width, tp (s)
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Drain Current, ID (A)
Tj = 25 C
18
16
14
12
10
8
6
4
2
4.5 V
5V
8V
5.5 V
VGS = 10V
6V
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
Mounting Base temperature, Tmb (C)
150
175
20
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain-Source Voltage, VDS (V)
1.6
1.8
2
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); V
GS
≥
10 V
Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
tp = 10 us
10
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
)
100
0.3
0.25
0.2
Drain-Source On Resistance, RDS(on) (Ohms)
4.5 V
5V
Tj = 25 C
100 us
1 ms
10 ms
100 ms
5.5 V
0.15
0.1
0.05
6V
8V
VGS = 10V
D.C.
1
0.1
1
10
100
Drain-Source Voltage, VDS (V)
1000
0
0
2
4
6
8
10
12
Drain Current, ID (A)
14
16
18
20
Fig.3. Safe operating area
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
)
August 1999
4
Rev 1.100
PHILIPS [ NXP SEMICONDUCTORS ]
