Philips Semiconductors
Product specification
Quadruple low to high voltage translator
with 3-state outputs
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
= 25
°C;
C
L
= 50 pF; input transition times
≤
20 ns
V
DD
V
Propagation delays
I
n
→
O
n
, O
n
HIGH to LOW
5
10
15
5
LOW to HIGH
Output transition times
HIGH to LOW
10
15
5
10
15
5
LOW to HIGH
3-state propagation
delays
Output disable times
EO
→
O
n
, O
n
HIGH
5
10
15
5
LOW
Output enable times
EO
→
O
n
, O
n
HIGH
5
10
15
5
LOW
10
15
t
PZL
t
PZH
195
95
80
195
95
80
395
195
165
395
190
160
ns
ns
ns
ns
ns
ns
10
15
t
PLZ
t
PHZ
70
55
60
70
55
55
135
110
120
135
105
110
ns
ns
ns
ns
ns
ns
10
15
t
TLH
t
THL
t
PLH
t
PHL
170
80
65
170
80
70
60
30
20
60
30
20
340
160
135
340
160
140
120
60
40
120
60
40
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
143 ns
69 ns
57 ns
143 ns
69 ns
62 ns
10 ns
9 ns
6 ns
10 ns
9 ns
6 ns
+
+
+
+
+
+
+
+
+
+
+
+
SYMBOL
TYP.
MAX.
HEF4104B
MSI
TYPICAL EXTRAPOLATION
FORMULA
(0,55 ns/pF) C
L
(0,23 ns/pF) C
L
(0,16 ns/pF) C
L
(0,55 ns/pF) C
L
(0,23 ns/pF) C
L
(0,16 ns/pF) C
L
(1,0 ns/pF) C
L
(0,42 ns/pF) C
L
(0,28 ns/pF) C
L
(1,0 ns/pF) C
L
(0,42 ns/pF) C
L
(0,28 ns/pF) C
L
V
DD
V
Dynamic power
dissipation per
package (P)
5
10
15
TYPICAL FORMULA FOR P (µW)
3 000 f
i
+ ∑
(f
o
C
L
)
×
V
DD2
12 200 f
i
+ ∑
(f
o
C
L
)
×
V
DD2
31 000 f
i
+ ∑
(f
o
C
L
)
×
V
DD2
where
f
i
= input freq. (MHz)
f
o
= output freq. (MHz)
C
L
= load capacitance (pF)
∑
(f
o
C
L
) = sum of outputs
V
DD
= supply voltage (V)
January 1995
4
PHILIPS [ NXP SEMICONDUCTORS ]
