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Table 2
Per type BZX585-B/C27 to
B/C75
T
amb
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 2 mA
Tol.
±
2 % (B)
MIN.
27
30
33
36
39
43
47
51
56
62
68
75
6
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
MAX.
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
at I
Ztest
= 2 mA
TYP.
25
30
35
35
40
45
50
60
70
80
90
95
MAX.
80
80
80
90
130
150
170
180
200
215
240
255
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 2 mA
(see figs
3
and
4)
TYP.
50
50
45
45
45
40
40
40
40
35
35
35
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
MAX.
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A) at t
p
= 100
µs
MAX.
2004 Jun 22
Philips Semiconductors
Voltage regulator diodes
BZX585-
B or C
XXX
Tol.
±
5 % (C) at I
Ztest
= 0.5 mA
MIN.
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
MAX.
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
TYP.
65
70
75
80
80
85
85
90
100
120
150
170
MAX.
300
300
325
350
350
375
375
400
425
450
475
500
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Notes
1. Device mounted on a FR4 printed-circuit board with approximately 35 mm
2
Cu area at cathode tab.
2. Solder point at cathode tab.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder point
note 1
note 2
CONDITIONS
VALUE
350
65
UNIT
K/W
K/W
BZX585 series
Product specification
PHILIPS [ NXP SEMICONDUCTORS ]
