Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
Logic level FET
FEATURES
•
’Trench’
technology
• Extremely fast switching
• Logic level compatible
• Subminiature surface mounting
package
BSS123
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 100 V
I
D
= 150 mA
g
R
DS(ON)
≤
6
Ω
(V
GS
= 10 V)
s
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect transistor in a plastic
envelope
using
’trench’
technology.
Applications:-
• Relay driver
• High-speed line driver
• Telephone ringer
The BSS123 is supplied in the
SOT23
subminiature
surface
mounting package.
PINNING
PIN
1
2
3
gate
source
drain
DESCRIPTION
SOT23
3
Top view
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 150˚C
T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ
T
a
= 25 ˚C
T
a
= 25 ˚C
T
a
= 25 ˚C
MIN.
-
-
-
-
-
-
- 55
MAX.
100
100
±
20
150
600
0.25
150
UNIT
V
V
V
mA
mA
W
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
surface mounted on FR4 board
TYP.
500
MAX.
-
UNIT
K/W
August 2000
1
Rev 1.000