Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP126
handbook,
2
MBB693
Ptot
(W)
1.6
handbook, halfpage
2
MDA712
ID
(A)
1.6
VGS = 10 V
6V
5V
1.2
1.2
4V
0.8
0.8
0.4
0.4
3V
2V
0
0
50
100
150
200
Tamb (°C)
0
0
2
4
6
8
10
VDS (V)
Fig.5
Fig.4 Power derating curve.
Output characteristics; T
j
= 25
°C;
typical
values.
handbook, halfpage
2
MDA713
ID
handbook, halfpage
10
4
MDA714
(A)
1.6
ID
(mA)
10
3
VGS = 10 V
5V
4V
3V
1.2
0.8
10
2
0.4
0
0
2
4
6
8
10
VGS (V)
10
0
4
8
12
16
RDSon (Ω)
Fig.6
Transfer characteristic; V
DS
= 10 V;
T
j
= 25
°C;
typical value.
Fig.7
On-resistance as a function of drain current;
T
j
= 25
°C;
typical values.
April 1995
5