Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
handbook, halfpage
4
MCD081
handbook, halfpage
4
MCD082
F
(dB)
3
f = 2 GHz
F
(dB)
3
I C = 15 mA
10 mA
5 mA
1 GHz
500 MHz
2
2
1
1
0
1
10
I C (mA)
10
2
0
10
2
10
3
f (MHz)
10
4
V
CE
= 10 V.
V
CE
= 10 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
Fig.14 Minimum noise figure as a function of
frequency; typical values.
−45
handbook, halfpage
d im
(dB)
−50
MBB282
−35
handbook, halfpage
d2
(dB)
−40
MBB283
−55
−45
−60
−50
−65
−55
−70
10
20
I C (mA)
30
−60
10
20
I C (mA)
30
V
CE
= 10 V; V
O
= 150 mV (43.5 dBmV);
f
p
+ f
q
−f
r
= 793.25 MHz; T
amb
= 25
°C.
Measured in MATV test circuit (see Fig.2).
V
CE
= 10 V; V
O
= 60 mV; f
p
+ f
q
−f
r
= 810 MHz; T
amb
= 25
°C.
Measured in MATV test circuit (see Fig.2).
Fig.15 Intermodulation distortion;
typical values.
Fig.16 Second order intermodulation distortion;
typical values.
1997 Oct 29
7
PHILIPS [ NXP SEMICONDUCTORS ]
